linear & power amplifiers - chip 3 3 - 16 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc442 gaas phemt mmic medium power amplifier, 17.5 - 25.5 ghz v03.1007 general description features functional diagram the hmc442 is an efficient gaas phemt mmic medium power ampli er which operates between 17.5 and 25.5 ghz. the hmc442 provides 15 db of gain, +23 dbm of saturated power and 25% pae from a +5v supply voltage. the ampli er chip can easily be integrated into multi-chip-modules (mcms) due to its small size. all data is tested with the chip in a 50 ohm test xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). saturated power: +23 dbm @ 25% pae gain: 15 db supply voltage: +5v 50 ohm matched input/output die size: 1.03 x 1.13 x 0.1 mm electrical speci cations, t a = +25 c, vdd = 5v, idd = 85 ma* typical applications the hmc442 is ideal for use as a medium power ampli er for: ? point-to-point and point-to-multi-point radios ? vsat parameter min. typ. max. min. typ. max. min. typ. max. units frequency range 17.5 - 21.0 21.0 - 24.0 24.0 - 25.5 ghz gain 12 14.5 12 15 13.5 16 db gain variation over temperature 0.02 0.03 0.02 0.03 0.02 0.03 db/ c input return loss 15 13 10 db output return loss 10 10 10 db output power for 1 db compression (p1db) 18 21 18.5 21.5 19 22 dbm saturated output power (psat) 20 23 20 23 20 23.5 dbm output third order intercept (ip3) 29 28 27 dbm noise figure 6.5 5.5 6 db supply current (idd)(vdd = 5v, vgg = -1v typ.) 85 110 85 110 85 110 ma * adjust vgg between -1.5 to -0.5v to achieve idd = 85 ma typical.
linear & power amplifiers - chip 3 3 - 17 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature -30 -20 -10 0 10 20 14 17 20 23 26 29 s21 s11 s22 response (db) frequency (ghz) 0 4 8 12 16 20 16 17 18 19 20 21 22 23 24 25 26 27 +25 c +85 c -55 c gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 16 17 18 19 20 21 22 23 24 25 26 27 +25 c +85 c -55 c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 16 17 18 19 20 21 22 23 24 25 26 27 +25 c +85 c -55 c return loss (db) frequency (ghz) 10 14 18 22 26 30 16 17 18 19 20 21 22 23 24 25 26 27 +25 c +85 c -55 c p1db (dbm) frequency (ghz) 10 14 18 22 26 30 16 17 18 19 20 21 22 23 24 25 26 27 +25 c +85 c -55 c psat (dbm) frequency (ghz) hmc442 v03.1007 gaas phemt mmic medium power amplifier, 17.5 - 25.5 ghz
linear & power amplifiers - chip 3 3 - 18 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com power compression @ 21 ghz output ip3 vs. temperature noise figure vs. temperature reverse isolation vs. temperature power compression @ 25 ghz 0 4 8 12 16 20 24 28 -10 -6 -2 2 6 10 14 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 0 5 10 15 20 25 30 35 -10 -6 -2 2 6 10 14 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 14 18 22 26 30 34 16 17 18 19 20 21 22 23 24 25 26 27 +25 c +85 c -55 c ip3 (dbm) frequency (ghz) 0 2 4 6 8 10 16 17 18 19 20 21 22 23 24 25 26 +25 c +85 c -55 c noise figure (db) frequency (ghz) 10 12 14 16 18 20 22 24 26 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 gain p1db psat gain (db), p1db (dbm), psat (dbm) vdd supply voltage (vdc) -60 -50 -40 -30 -20 -10 0 16 17 18 19 20 21 22 23 24 25 26 27 +25 c +85 c -55 c isolation (db) frequency (ghz) gain & power vs. supply voltage @ 25 ghz hmc442 v03.1007 gaas phemt mmic medium power amplifier, 17.5 - 25.5 ghz
linear & power amplifiers - chip 3 3 - 19 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings drain bias voltage (vdd) +5.5 vdc gate bias voltage (vgg) -4 to 0 vdc rf input power (rfin)(vdd = +5vdc) +20 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 7.1 mw/c above 85 c) 0.64 w thermal resistance (channel to die bottom) 141 c/ w storage temperature -65 to +150 c operating temperature -55 to +85 c vdd (vdc) idd (ma) +4.5 82 +5.0 85 +5.5 89 +2.7 79 +3.0 83 +3.3 86 typical supply current vs. vdd note: ampli er will operate over full voltage ranges shown above notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond is .004 square 4. backside metallization: gold 5. bond pad metallization: gold 6. backside metal is ground. 7. connection not required for unlabeled bond pads. electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc442 v03.1007 gaas phemt mmic medium power amplifier, 17.5 - 25.5 ghz
linear & power amplifiers - chip 3 3 - 20 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad descriptions pad number function description interface schematic 1vgg gate control for ampli er. adjust to achieve id of 85 ma. please follow mmic ampli er biasing procedure application note. 2rfin this pad is ac coupled and matched to 50 ohms. 3vdd power supply voltage for the ampli er. external bypass capacitors of 100 pf and 0.01 f are required. 4rfout this pad is ac coupled and matched to 50 ohms. assembly diagram hmc442 v03.1007 gaas phemt mmic medium power amplifier, 17.5 - 25.5 ghz
linear & power amplifiers - chip 3 3 - 21 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accom- plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec- tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc442 v03.1007 gaas phemt mmic medium power amplifier, 17.5 - 25.5 ghz
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